TITLE

Enhanced magnetoresistance of semiconductor-metal hybrid structures

AUTHOR(S)
Holz, M.; Kronenwerth, O.; Grundler, D.
PUB. DATE
June 2005
SOURCE
AIP Conference Proceedings;2005, Vol. 772 Issue 1, p431
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semiconductor-metal hybrid structures can show a large magnetoresistance effect, the extraordinary magnetoresistance (EMR) effect. In this work, we study theoretically the influence of the voltage probe configuration on the magnetoresistance of such hybrid structures. We find a configuration, in which the current sensitivity of the device is enhanced considerably if compared to the probe configuration discussed so far in the literature. We argue that this enhancement is due to the combination of the EMR effect and the Hall effect in the hybrid structure. © 2005 American Institute of Physics
ACCESSION #
17804510

 

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