Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation

Rivero, C.; Gergaud, P.; Gailhanou, M.; Thomas, O.; Froment, B.; Jaouen, H.; Carron, V.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p041904
Academic Journal
Combined x-ray diffraction and wafer curvature measurements during annealing of Ni thin films (13 nm) deposited on Si (001) reveal distinct stages in stress development and silicide growth. Thanks to this unique experimental setup, a clear correlation is established between force extrema at distinct temperatures and the appearance of new silicides. It is shown that the transient formation of Ni3Si2 has a strong influence on the overall stress development.


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