Ballistic bit addressing in a magnetic memory cell array

Schumacher, H. W.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p042504
Academic Journal
A ringing free bit addressing scheme for magnetic memories like magnetic random access memory (MRAM) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch). With well adapted pulse parameters both full-select and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultrahigh MRAM clock rates.


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