Performances and limitations of InAs/InAlAs metamorphic heterostructures on InP for high mobility devices

Wallart, X.; Lastennet, J.; Vignaud, D.; Mollot, F.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p043504
Academic Journal
InAs has been studied as the active material of metamorphic InAlAs/InAs modulation-doped heterostructures grown on InP. We show that the main limitation of these structures is the plastic relaxation of the 10–15 nm thick InAs channel compressively strained to the underlying InAlAs buffer. The best results are obtained with a composite channel made of 7 nm InAs inserted in an InGaAs layer. In this case, the electron mobility reaches 21 500 and 179 000 cm2/V s at 300 and 77 K, respectively, for a sheet carrier density of 9×1011 cm-2. These values are among the highest ones ever reported for such metamorphic structures.


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