Multiple implantations into Si: Influence of the implantation sequence on ion range profiles

Posselt, M.; Mäder, M.; Lebedev, A.; Grötzschel, R.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p043109
Academic Journal
In successive implantations of p- and/or n-dopants, the implantation sequence may affect the ion range distributions. This is demonstrated for two consecutive implantations into the [001] channel direction: (i) 35 keV B followed by 50 keV As and (ii) 50 keV As followed by 35 keV B. The defects formed in the first implantation cause enhanced dechanneling of the subsequently implanted ions and, therefore, influence the shape of the range distributions in the second implantation step. The experimental range profiles can be reproduced very well by atomistic computer simulations that take into account damage accumulation or dynamic annealing during a single implantation step as well as the influence of the defects formed by the preceding implantation steps.


Related Articles

  • Oxygen precipitation and secondary defects in silicon by high energy ion implantation and... Yoon, Sahng-Hyun; Kwack, Kae-Dal // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2448 

    Presents information on a study investigated the oxygen precipitation and secondary defects in silicon using high energy ion implantation and a two-step annealing method. Experimental procedure; Results and discussion; Conclusions.

  • Role of silicon interstitials in boron cluster dissolution. Aboy, Maria; Pelaz, Lourdes; Marqués, Luis A.; López, Pedro; Barbolla, Juan; Duffy, R.; Venezia, V. C.; Griffin, Peter B. // Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p031908 

    We present kinetic nonlattice Monte Carlo atomistic simulations to investigate the role of Si interstitials in B cluster dissolution. We show that the presence of Si interstitials from an oxidizing anneal stabilize B clusters and slow down B cluster dissolution, compared to anneal in inert...

  • Capless annealing of ion implanted GaAs in automatically evaporated vapor. Lee, C. T. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p554 

    A simplified automatic vapor capless annealing technique for ion implanted GaAs wafers is demonstrated. The basic method is to put an implanted GaAs wafer in a partially sealed quartz crucible which is filled with GaAs powder. The measured Hall mobility of the implanted sample annealed by this...

  • Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features. Martin-Bragado, I.; Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rublo, J. E.; Barbolla, J. // Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4962 

    The atomistic physically based kinetic Monte Carlo method has been used in conjunction with the binary collision approximation (BCA) to elucidate the implant mechanisms most relevant for modeling transient-enhanced diffusion (TED). For the cases studied, we find that: (i) The spatial correlation...

  • A Comparative Study Of Dopant Activation And Deactivation In Boron Implanted Silicon. Qin, S.; McTeer, Allen; Hu, Jeff Y.; Prussin, S.; Reyes, Jason // AIP Conference Proceedings;1/7/2011, Vol. 1321 Issue 1, p184 

    BF2 beamline and B2H6 PLAD implants were evaluated after a series of low, high, low, high anneals. Following a high anneal, we find an increase in mobility and a decrease in concentration of mobility scattering defects.

  • Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si. Katsumata, Hiroshi; Makita, Yunosuke; Kobayashi, Naoto; Shibata, Hajime; Hasegawa, Masataka; Aksenov, Igor; Kimura, Shinji; Obara, Akira; Uekusa, Shin-ichiro // Journal of Applied Physics;11/15/1996, Vol. 80 Issue 10, p5955 

    Presents a study which showed that the formation of Î’FeSi[sub2] is achieved by high dose iron ion implantation into silicon and subsequent two-step annealing. Experimental methods; Results and discussion; Conclusions.

  • Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H. Nguyen, Phuong; Bourdelle, K. K.; Aulnette, C.; Lallement, F.; Daix, N.; Daval, N.; Cayrefourcq, I.; Letertre, F.; Mazuré, C.; Bogumilowicz, Y.; Tauzin, A.; Deguet, C.; Cherkashin, N.; Claverie, A. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113526 

    We have performed systematic measurements of the splitting kinetics induced by H-only and He+H sequential ion implantation into relaxed Si0.8Ge0.2 layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si0.8Ge0.2. Sequential ion implantation leads to...

  • INFLUENCE OF THE RADIATION DAMAGES TO THE HYDROGEN DONORS FORMATION IN SILICON, IMPLANTED WITH LOW-ENERGY HYDROGEN IONS. Tsvyrko, Viktor // International Conference: Radiation Interaction with Material & ;2006, p163 

    Isohronal annealing has been held in 75-450 °C temperature interval. The electrophysical properties of epitaxial silicon, implanted with high fluences of low- energy protons, has been researched. The alternation of the radiation defects concentration and electron concentration are studied...

  • Probing Ar ion induced nanocavities/bubbles in silicon by small-angle x-ray scattering. Suresh, Koppoju; Ohnuma, M.; Oba, Y.; Kishimoto, N.; Das, P.; Chini, T. K. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 7, p073504 

    Small-angle x-ray scattering (SAXS) measurements have been performed to investigate the nanocavities/bubbles and the amorphous silicon surrounding the cavities/bubbles generated after high fluence medium-energy (60 keV) Ar ion implantation in single crystalline Si as a function of incidence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics