Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

Buonassisi, T.; Istratov, A. A.; Pickett, M. D.; Marcus, M. A.; Hahn, G.; Riepe, S.; Isenberg, J.; Warta, W.; Willeke, G.; Ciszek, T. F.; Weber, E. R.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p044101
Academic Journal
Synchrotron-based, spectrally resolved x-ray beam-induced current (SR-XBIC) is introduced as a technique to locally measure the minority carrier diffusion length in semiconductor devices. Equivalence with well-established diffusion length measurement techniques is demonstrated. The strength of SR-XBIC is that it can be combined in situ with other synchrotron-based analytical techniques, such as x-ray fluorescence microscopy (μ-XRF) and x-ray absorption microspectroscopy (μ-XAS), yielding information about the distribution, elemental composition, chemical nature, and effect on minority carrier diffusion length of individual transition metal species in multicrystalline silicon. SR-XBIC, μ-XRF, and μ-XAS measurements were performed on intentionally contaminated multicrystalline silicon, revealing a strong correlation between local concentrations of copper and nickel silicide precipitates and a decrease of minority carrier diffusion length. In addition, the reduction of minority carrier diffusion length due to submicron-sized Cu3Si and NiSi2 precipitates could be decoupled from the influence of homogeneously distributed nanoprecipitates and point defects.


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