TITLE

Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy

AUTHOR(S)
Matsuda, K.; Saiki, T.; Nomura, S.; Aoyagi, Y.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p043112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have described near-field photoluminescence microscopy of a field-induced quantum-dot structure based on a Be–δ-doped GaAs–Al1-xGaxAs single heterojunction with a surface square mesh gate. The local density of states in the field-induced quantum dot was mapped by measuring the spatial distribution of the near-field photoluminescence intensity, because the photoluminescence spectrum owing to the recombination of holes bound to Be accepters with electrons in an electron gas contains information on the electronic density of states. Experimentally, we observed that the electrons confined in lower energy states spatially localize in a field-induced quantum dot.
ACCESSION #
17782593

 

Related Articles

  • Near-field magneto-optics of quantum dots. Zora, Anna; Simserides, Constantinos; Triberis, Georgios // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p893 

    Encouraged by the latest experimental developments as well as by the theoretical interest on the near-field (NF) optics of semiconductor quantum dots (QDs), we present our most recent theoretical results on the NF optical absorption and photoluminescence (PL) of single and coupled III-V QDs...

  • Near-field optical photoluminescence microscopy of high-density InAs/GaAs single quantum dots. Eah, Sang-Kee; Jhe, Wonho; Arakawa, Yasuhiko // Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2779 

    We performed low-temperature near-field optical photoluminescence (PL) microscopy of a high-density (>100 μm[sup -2]) sample of single InAs/GaAs quantum dots (QDs) with very high spatial resolution. Six single QDs of different emission energies are spatially resolved with an apertured fiber...

  • An Optical Probe Can Map Quantum Dot Wavefunctions. Fitzgerald, Richard // Physics Today;Nov2003, Vol. 56 Issue 11, p14 

    Focuses on the application of near-field optical microscopy in mapping the quantum dot wavefunctions. Technical challenges in the optical studies of quantum dots; Effects of the diffraction limit on the spatial resolution of an optics system; Process in mapping the dot.

  • Spectral fluctuations of excitonic transitions of InGaAs single quantum dots. Bak, Wan; Noh, Haneol; Stambaugh, Corey; Arakawa, Yasuhiko; Jhe, Wonho // Applied Physics Letters;1/9/2012, Vol. 100 Issue 2, p022105 

    We report on our experimental study of spectral diffusion in grown InGaAs single quantum dots. Using a double-tapered tip, near-field scanning optical microscope, we obtain the spectral diffusion resulting from the quantum confined Stark effect of individual quantum dots in a randomly...

  • Optical near-field mapping of bright and dark quantum dot states. Hohenester, Ulrich; Goldoni, Guido; Molinari, Elisa // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p877 

    We theoretically investigate scanning nearfield optical microscopy (SNOM) of semiconductor quantum dots. In the nearfield regime bright and dark excitonic states become mixed, opening new channels for the coupling to the electromagnetic field. As a consequence, ultra-narrow luminescence lines...

  • Near-field light emission from dark states excitonic occupations. Pistone, G.; Savasta, S.; Di Stefano, O.; Martino, G.; Girlanda, R.; Portolan, S. // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p173114 

    We theoretically analyze the carrier capture and distribution among the available energy levels of a symmetric semiconductor quantum dot under continuous-wave excitation resonant with the barrier energy levels. At low temperature, all the dot level occupations but one monotonically decrease with...

  • A low-temperature scanning near-field optical microscope for photoluminescence at semiconductor structures. Manke, I.; Pahlke, D.; Lorbacher, J.; Busse, W.; Kalka, T.; Richter, W.; Dähne-Prietsch, M. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS381 

    Abstract. We report on the design of a scanning near-field optical microscope (SNOM) for spatially resolved photoluminescence experiments at temperatures down to 90 K. First results on In[sub 0.4]Ga[sub 0.6]As quantum dots are presented.

  • Room-temperature photoluminescence spectroscopy of self-assembled In[sub 0.5]Ga[sub 0.5]As single quantum dots by using highly sensitive near-field scanning optical microscope. Matsuda, K.; Saiki, T.; Saito, H.; Nishi, K. // Applied Physics Letters;1/3/2000, Vol. 76 Issue 1 

    We have studied the optical properties of self-assembled In[sub 0.5]Ga[sub 0.5]As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by...

  • CdTe Quantum Dots in a Field Effect Structure: Photoluminescence Lineshape Analysis. Kłopotowski, Ł.; Kudelski, A.; Wojnar, P.; Tartakovskii, A. I.; Skolnick, M. S.; Krebs, O.; Voisin, P.; Kret, S.; Dłużewski, P.; Karczewski, G.; Wojtowicz, T. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p301 

    We study an photoluminescence line of a single, self assembled CdTe quantum dot embedded in a field-effect structure. As a reverse bias is applied the line becomes broader and its intensity is decreased as a result of enhanced escape of the photocreated carriers. We account for the observed...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics