Cr/Pt Ohmic contacts to B12As2

Wang, S. H.; Lysczek, E. M.; Liu, Bangzhi; Mohney, S. E.; Xu, Z.; Nagarajan, R.; Edgar, J. H.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p042103
Academic Journal
Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B12As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3×10-4 Ω cm2 after the Cr/Pt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.


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