Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, M.; Marso, M.; Mayorga, I. Cámara; Güsten, R.; Stancˇek, S.; Kovácˇ, P.; Wu, S.; Li, Xia; Khafizov, M.; Sobolewski, R.; Michael, E. A.; Schieder, R.; Wolter, M.; Buca, D.; Förster, A.; Kordosˇ, P.; Lüth, H.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p041106
Academic Journal
We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of ∼3×1012 cm-2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts (photomixers fabricated on low-temperature-grown GaAs) the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers.


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