TITLE

Photomixers fabricated on nitrogen-ion-implanted GaAs

AUTHOR(S)
Mikulics, M.; Marso, M.; Mayorga, I. Cámara; Güsten, R.; Stancˇek, S.; Kovácˇ, P.; Wu, S.; Li, Xia; Khafizov, M.; Sobolewski, R.; Michael, E. A.; Schieder, R.; Wolter, M.; Buca, D.; Förster, A.; Kordosˇ, P.; Lüth, H.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p041106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of ∼3×1012 cm-2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts (photomixers fabricated on low-temperature-grown GaAs) the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers.
ACCESSION #
17782576

 

Related Articles

  • Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly.... D'Ottavi, A.; Iannone, E. // Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2492 

    Examines a highly nondegenerate four-wave mixing experiment that extends up to 1 terahertz in a bulk semiconductor amplifier. Simultaneous appearance of carrier heating and spectral hole burning; Explanation on the relative weight of two saturation mechanism in the devices; Effect of change of...

  • Mixer with combination of Single and Double Balanced Mixers using 0.35 µm CMOS Technology. Mehta, Shilpa; Dua, Shilpa // International Journal of ElectroComputational World & Knowledge ;Sep2011, Vol. 1 Issue 1, p12 

    This paper presents a mixer topology based on 0.35 um CMOS Technology. In this proposed circuit, Single Balanced and Double Balanced Gilbert Mixers are used. The features of this mixer is to reduce noise, improve conversion gain and linearity . The RF, LO and IF signals are provided in the range...

  • Modeling Mixers Gyroscopic Type. Yudin, Konstantin Anatolyevich; Kuschev, Leonid Anatolyevich; Savkin, Ivan Nikolayevich; Negrun, Alexander Nikolayevich // Middle East Journal of Scientific Research;11/15/2013, Vol. 17 Issue 8, p1125 

    Considered are the peculiarities of the development of mixers gyroscopic type. There is represents the desirability of such mixers. Completed a review of Russian and foreign writers on the subject. Shows two copyright kinematic scheme of mixers gyroscopic type, describe the impact on the mixing...

  • A single-photon transistor using nanoscale surface plasmons. Chang, Darrick E.; S�rensen, Anders S.; Demler, Eugene A.; Lukin, Mikhail D. // Nature Physics;Nov2007, Vol. 3 Issue 11, p807 

    Photons rarely interact�which makes it challenging to build all-optical devices in which one light signal controls another. Even in nonlinear optical media, in which two beams can interact because of their influence on the medium�s refractive index, this interaction is weak at low...

  • 1-THz Low-Noise SIS Mixer with a Double-Dipole Antenna. Shitov, S. V.; Markov, A. V.; Jackson, B. D.; Baryshev, A. M.; Iosad, N. N.; Gao, J.-R.; Klapwijk, T. M. // Technical Physics;Sep2002, Vol. 47 Issue 9, p1152 

    A quasi-optical mixer containing two Nb/A1/AIO[sub x]/Nb superconducting tunnel junctions integrated into a NbTiN/SiO[sub 2]/A1 microstrip line is studied experimentally in the 800-1000 GHz frequency range. The mixer is developed as an optional front end of the heterodyne receiver operating in...

  • Strong instantaneous contribution in femtosecond degenerate four-wave mixing from 350 μm InP due to virtual excitation. Yu, Sungkyu; Chu, Jang Hee; Lee, Joo In; Kim, Dongho; Yee, Y. H.; Kim, D. S.; Leem, Jae-Young; Lee, Cheul-Ro; Lee, Jong Hyun // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p79 

    We have observed strong four-wave mixing (FWM) signals from the third up to the seventh order for a 350 μm undoped InP at 10 K with an excitation at far below the band gap. The third order spectrally resolved FWM signal shifts continuously to blue as time delay moves away from positive to...

  • Working With Mixers. Carr, Joseph J. // Electronics Now;Jan1999, Vol. 70 Issue 1, p40 

    Offers information on how to work with electronic mixers. Use of the mixer in the superheterodyne receiver design; Problems in using a mixer; Definition of discretes; Use of the passive Schottky diode double-balanced mixer in solving problems normally encountered with mixer circuits.

  • 5 Mix-Saving EQ Tips. Molenda, Michael // Guitar Player;Apr2012, Vol. 46 Issue 4, p140 

    The article offers tips on mix-saving equalizer including look downstream, know the neighborhood and cut first.

  • Minimization of the noise temperature of the free-electron bolometer mixer. Moore, W. J.; Newman, H. S.; Webb, D. C. // Journal of Applied Physics;9/1/1985, Vol. 58 Issue 5, p1715 

    Calculates the factors which limit the bandwidth and noise temperature of the free-electron bolometer mixer. Conditions under which the minimum mixer contribution to the effective noise temperature is found to be 33T[sublattice]; Function of the free-electron bolometer; Heat flow model for the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics