Effects of postgrowth rapid thermal annealing on InAlAs/InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs/InGaAlAs buffer

Soo-Ghang Ihn; Seong-June Jo; Jong-In Song
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p042108
Academic Journal
Effects of postgrowth rapid thermal annealing (RTA) on structural and electrical properties of an In0.52Al0.48As/In0.52Ga0.48As metamorphic high-electron-mobility transistor (MHEMT) structure grown on a GaAs substrate utilizing a compositionally graded InAlAs/InGaAlAs buffer layer were investigated. High-resolution triple-axis x-ray diffraction, photoluminescence, and van der Pauw–Hall measurements were used for the investigation. While the RTA improved the structural property of the MHEMT, it degraded the channel mobility of the MHEMT due to defect-assisted impurity redistribution.


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