Low-voltage ZnO thin-film transistors with high-K Bi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics

Il-Doo Kim; YongWoo Choi; Tuller, Harry L.
July 2005
Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p043509
Academic Journal
We report on the fabrication of field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-K Bi1.5Zn1.0Nb1.5O7 (BZN) as the gate insulator. The devices exhibited very low operation voltages (<4 V) due to high capacitance of the BZN dielectric. The field effect mobility and the current on/off ratio were 0.024 cm2/V s and 2×104, respectively, at an operating voltage of 4 V. The threshold voltage and subthreshold swing were 2 V and 0.25 V/dec, respectively. The high optical transparency (>80% for wavelength >400 nm), low-temperature processing, and low operation voltage of ZnO-based thin-film transistors with integrated BZN dielectric offer a promising route for the development of transparent and flexible electronics.


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