Switchable single c-domain formation in a heteroepitaxial PbTiO3 thin film on a (001) Nb–SrTiO3 substrate fabricated by means of hydrothermal epitaxy

Jung, W. W.; Lee, H. C.; Ahn, W. S.; Ahn, S. H.; Choi, S. K.
June 2005
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252901
Academic Journal
We used hydrothermal epitaxy to fabricate a heteroepitaxial PbTiO3 (PTO) thin film on a Nb-doped (001) cubic SrTiO3 (NSTO) substrate while avoiding the phase transition. By means of transmission electron microscopy and piezoresponse force microscopy analyses, it was confirmed that no a domain formed in the heteroepitaxial PTO film; the film had a single +c-domain structure at an as-synthesized state. From the measurement of the polarization-voltage hysteresis curve, large remanent polarization (2Pr: 144 μC/cm2) resulting from the single +c-domain structure and an imprint induced by an asymmetric electrode configuration were observed. It is suggested that the single +c-domain structure was caused by the interface of the PTO film and solution rather than the interface of the PTO film and NSTO electrode under the hydrothermal conditions. This hydrothermally synthesized PTO film is anticipated to be very suitable for high-performance engineering applications.


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