TITLE

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

AUTHOR(S)
Kang, B. S.; Kim, J.; Jang, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N. G.; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45×10-3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.
ACCESSION #
17636615

 

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