Epitaxial La2/3Sr1/3MnO3 thin films with metallic behavior above the Curie temperature

Bertacco, R.; Riva, M.; Cantoni, M.; Signorini, L.; Ciccacci, F.
June 2005
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252502
Academic Journal
Despite its half-metallic character, La2/3Sr1/3MnO3 is currently not considered a good candidate for real spin electronic devices due to the dramatic deterioration of its spin polarization at room temperature. Using pulsed-laser deposition, we have grown thin films of La2/3Sr1/3MnO3, which display good room-temperature magnetic properties accompanied by a sizable increase of the temperature at which the metal-insulator transition takes place with respect to the Curie temperature. The persistence of the metallic character well above the Curie temperature indicates minor modifications of the electronic structure near the Fermi level, which is responsible for the half-metallicity. These films are good candidates for increasing the operating temperature of devices based on La2/3Sr1/3MnO3.


Related Articles

  • Electric-pulse-induced reflectance change in the thin film of perovskite manganite. Aoyama, K.; Waku, K.; Asanuma, A.; Uesu, Y.; Katsufuji, T. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1208 

    We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1-xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.

  • Pressure induced phase transition in periodic microtwinned thin film of La0.88Sr0.1MnO3. Razavi, F. S.; Sudhakar Rao, G. V.; Jalili, H.; Habermeier, H.-U. // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p174103 

    We have studied the resistivity of a hole-doped 95 nm thin film of La0.88Sr0.1MnO3 sample as a function of pressure up to 2.0 GPa. For pressures below 0.81 GPa, the sample showed that the resistivity decreased at all temperatures and the metal insulator transition temperature TMI increased to...

  • Phase-field modeling of stress-induced surface instabilities in heteroepitaxial thin films. Seol, D. J.; Hu, S. Y.; Liu, Z. K.; Chen, L. Q.; Kim, S. G.; Oh, K. H. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044910 

    A phase-field model for investigating the surface morphological evolution of a film is developed, taking into account the surface energies of film and substrate, the interfacial energy between the film and substrate, and the elastic energy associated with the lattice mismatch between the film...

  • Structural and magnetic properties of epitaxially grown Ge1-xFex thin films: Fe concentration dependence. Shuto, Yusuke; Tanaka, Masaaki; Sugahara, Satoshi // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p1 

    Ge1-xFex films (x=2.0%–24.0%) grown by low-temperature molecular beam epitaxy were shown to have a diamond-type crystal structure without any other crystallographic phase of precipitates, although they contain slightly nonuniform Fe distribution and tiny stacking fault defects. The...

  • Discrete deposition as a powerful tool to govern magnetoresistance of the doped manganite films. Tovstolytkin, A. I.; Pogorily, A. N.; Matviyenko, A. I.; Vovk, A. Ya.; Wang, Zh. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p043902 

    A peculiar preparation routine, namely, a discrete deposition, is proposed for a goal-oriented change of electric and magnetotransport properties of the doped manganite films. The distinguishing feature of such procedure is a division of the whole deposition process into several cycles...

  • High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics. Simões, A. Z.; Ries, A.; Riccardi, C. S.; Gonzalez, A. H. M.; Longo, E.; Varela, J. A. // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p074110 

    CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent...

  • Growth and thermal stability of Ga(1-X)CrXN films. Thaler, G. T.; Frazier, R. M.; Abernathy, C. R.; Pearton, S. J. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131901 

    GaCrN thin films were synthesized using gas-source molecular beam epitaxy. No evidence of second-phase formation was observed by powder x-ray diffraction. Magnetic characterization performed using a superconducting quantum interference device magnetometer showed evidence of ferromagnetic...

  • Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy. Wassner, Thomas A.; Laumer, Bernhard; Maier, Stefan; Laufer, Andreas; Meyer, Bruno K.; Stutzmann, Martin; Eickhoff, Martin // Journal of Applied Physics;Jan2009, Vol. 105 Issue 2, pN.PAG 

    Wurtzite Zn1-xMgxO thin films with Mg contents between x=0 and x=0.37 were grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy using a MgO/ZnMgO buffer layer. The a-lattice parameter is independent from the Mg concentration, whereas the c-lattice parameter decreases...

  • Oxygen content dependence of the photovoltaic characteristic of miscut manganite thin films. Ni, H.; Yu, D.; Zhao, K.; Kong, Y.-C.; Wong, H. K.; Zhao, S. Q.; Zhang, W. S. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p033112 

    We report the effect of oxygen stoichiometry on the photovoltaic properties of miscut managanite La0.4Ca0.6MnO3-δ epitaxial films. The oxygen content was changed by annealing the sample alternately between oxygen and vacuum annealing. With the decrease of oxygen deficiencies, the electrical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics