TITLE

Interfacial segregation of dopants in fully silicided metal-oxide-semiconductor gates

AUTHOR(S)
Copel, M.; Pezzi, R. P.; Cabral, C.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p251904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the structure of Sb and Al implanted NiSi/SiO2 interfaces. The addition of dopants has been previously found to alter operating thresholds of silicide-gated field effect transistors. We find that Sb is segregated to an interfacial site, and is in a metallic bonding configuration. In contrast, interfacial Al is in an oxidized state. The two additives would appear to alter the threshold voltages by distinctly different mechanisms.
ACCESSION #
17636607

 

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