Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1-x)O3 thin film by high oxygen-pressure processing

Zhang, X. D.; Meng, X. J.; Sun, J. L.; Lin, T.; Chu, J. H.
June 2005
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252902
Academic Journal
A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(ZrxTi1-x)O3 (PZT) thin film was fabricated at temperature as low as 400 °C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50/50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with Pr and Ec of 45 μC/cm2 and 121 kV/cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized Pr and Ec are of 26 μC/cm2 and 93 kV/cm under an applied electric field of 400 kV/cm.


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