Integration of organic light-emitting diode and organic transistor via a tandem structure

Chu, Chih-Wei; Chen, Chieh-Wei; Li, Sheng-Han; Wu, Elbert Hsing-En; Yang, Yang
June 2005
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253503
Academic Journal
A high-performance organic active matrix pixel was fabricated by using a metal oxide (V2O5) coupling layer that effectively integrates an organic light-emitting diode (OLED) on top of an organic field-effect transistor (OFET). The field-effect mobility of the OFET approached 0.5 cm2 V-1 s-1 and the ON/OFF current ratio was >103. The brightness of the OLED was on the order of 2000 cd/m2, with an efficiency above 3.3 cd/A. The present work describes in detail a methodology for sizing and stacking an OFET in bottom-emitting active matrix pixel circuits. The confinement of pixel dimension ensures the uniformity of light emission. The material for coupling layer can be tailored to achieve maximum device efficiency. A unique active matrix pixel circuit is proposed that renders both the OFET and OLED their individual performance after integration.


Related Articles

  • Transparent indium zinc oxide top cathode prepared by plasma damage-free sputtering for top-emitting organic light-emitting diodes. Han-Ki Kim; Kyu-Sung Lee; Kwon, J. H. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p012103 

    We report on plasma damage-free sputtering of an indium zinc oxide (IZO) top cathode layer for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6 Ω/cm and average transmittance above 88% in visible range were...

  • GaInN/GaN growth optimization for high-power green light-emitting diodes. Wetzel, C.; Salagaj, T.; Detchprohm, T.; Li, P.; Nelson, J. S. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p866 

    Two different approaches to optimize the growth conditions for high-power green light-emitting diodes (LEDs) using Ga1-xInxN/GaN metalorganic vapor phase epitaxy are discussed. We compare typical results in terms of morphology, photo-, and electroluminescence properties. We find good results for...

  • Optical upconversion devices based on photosensitizer-doped organic light-emitting diodes. Lu, Jiashu; Zheng, Yuan; Chen, Zhijian; Xiao, Lixin; Gong, Qihuang // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p201107 

    The optical upconversion of infrared light to visible light has been achieved in photosensitizer-doped organic light-emitting diodes, where poly(N-vinylcarbazole) doped with infrared photosensitizer of 2,4,7-trinitro-9-fluorenylidene)malonitrile was used as hole-transporting layer, and...

  • A study of transparent contact to vertical GaN-based light-emitting diodes. Kim, D. W.; Lee, H. Y.; Yeom, G. Y.; Sung, Y. J. // Journal of Applied Physics;9/1/2005, Vol. 98 Issue 5, p053102 

    In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum...

  • Evolution of luminance by voltage in organic light-emitting diodes. Byung Mook Weon; Soo Young Kim; Jong-Lam Lee; Jung Ho Je // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p013503 

    We study degradation behaviors of luminance and voltage in organic light-emitting diodes. We find that normalized luminance and inverse normalized voltage with time, L(t) and V(t)-1, follow the stretched exponential decay. On this basis, we derive a general relation of luminance and voltage with...

  • Decay mechanisms of a blue organic light emitting diode. Ni, S. Y.; Wang, X. R.; Wu, Y. Z.; Chen, H. Y.; Zhu, W. Q.; Jiang, X. Y.; Zhang, Z. L.; Sun, R. G. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p878 

    A blue organic light-emitting diode employing perylene as light emitting dopant and 9,10-bis(3’5’-diaryl)phenyl anthracene (DPA) as host has been studied for its decay mechanisms. The device structure is ITO(indium tin oxide)/CuPc(copper...

  • Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes. Chhajed, S.; Xi, Y.; Li, Y.-L.; Gessmann, Th.; Schubert, E. F. // Journal of Applied Physics;3/1/2005, Vol. 97 Issue 5, p054506 

    Trichromatic white-light sources based on light-emitting diodes (LEDs) offer a high luminous efficacy of radiation, a broad range of color temperatures and excellent color-rendering properties with color-rendering indices (CRIs) exceeding 85. An analysis of the luminous efficacy and CRI of a...

  • Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices. Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori // Applied Physics Letters;10/3/2005, Vol. 87 Issue 14, p143503 

    The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO...

  • GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer. Jong Kyu Kim; Gessmann, Thomas; Schubert, E. Fred; Xi, J.-Q.; Hong Luo; Jaehee Cho; Cheolsoo Sone; Yongjo Park // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p013501 

    Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics