Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor

Henriksen, E. A.; Syed, S.; Ahmadian, Y.; Manfra, M. J.; Baldwin, K. W.; Sergent, A. M.; Molnar, R. J.; Stormer, H. L.
June 2005
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252108
Academic Journal
We report on the temperature dependence of the mobility μ of the two-dimensional (2D) electron gas in a variable density AlGaN/GaN field-effect transistor, with carrier densities ranging from 0.4×1012 to 3.0×1012 cm-2 and a peak mobility of 80 000 cm2/V s. Between 20 and 50 K we observe a linear dependence μac-1=αT, indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with α being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations that account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D=12–15 eV.


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