TITLE

# Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor

AUTHOR(S)
Henriksen, E. A.; Syed, S.; Ahmadian, Y.; Manfra, M. J.; Baldwin, K. W.; Sergent, A. M.; Molnar, R. J.; Stormer, H. L.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252108
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
We report on the temperature dependence of the mobility Î¼ of the two-dimensional (2D) electron gas in a variable density AlGaN/GaN field-effect transistor, with carrier densities ranging from 0.4Ã—1012 to 3.0Ã—1012 cm-2 and a peak mobility of 80 000 cm2/V s. Between 20 and 50 K we observe a linear dependence Î¼ac-1=Î±T, indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with Î± being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations that account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D=12â€“15 eV.
ACCESSION #
17636578

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