TITLE

Trapping of hydrogen in argon-implanted crystalline silicon

AUTHOR(S)
Ma, Y.; Job, R.; Düngen, W.; Huang, Y. L.; Fahrner, W. R.; Beaufort, M. F.; Rousselet, S.; Horstmann, J. T.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crystalline silicon wafers are implanted with argon ions and subsequently hydrogenated by H-plasma treatments (Sample A). The control silicon samples are solely treated by the H-plasma under identical conditions (Sample B). Depth-resolved μ-Raman spectroscopy and cross-sectional transmission electron microscopy are carried out on both samples. In Sample A, two kinds of hydrogen molecules, namely H2(I) located in vacancies, and H2(II) located in platelets are observed. It is found that the depth profile of the H2(I) molecules is consistent with that of the vacancies created by the Ar implantation, but deeper than that of H2(II) molecules (~ 0.4 versus ~ 0.3 μm). In Sample B, only the H2(II) molecules are observed. Its depth distribution extends much deeper than in Sample A (~ 1 versus ~ 0.3 μm). These results indicate that the vacancies created during Ar implantation act as trap centers to block the hydrogen diffusion into deeper wafer regions during the subsequent H-plasma treatments.
ACCESSION #
17636577

 

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