Size control of InAs quantum dashes

Sauerwald, A.; Kümmell, T.; Bacher, G.; Somers, A.; Schwertberger, R.; Reithmaier, J. P.; Forchel, A.
June 2005
Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253112
Academic Journal
Self-organized InAs quantum dashes grown on In0.53Ga0.23Al0.24As/InP have been investigated by chemically sensitive scanning transmission electron microscopy. The quantum dashes, which consist of pure InAs, exhibit a triangular cross section. Most important, the quantum dash size depends linearly on the nominal InAs layer thickness and can be varied by a factor of 3 without changing the height/width ratio. Thus, the emission wavelength can be controlled between 1.37 and 1.9 μm without modifying shape and composition of the quantum dashes by adjusting a single growth parameter.


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