TITLE

Temperature accelerated dielectric breakdown of PECVD low- k carbon doped silicon dioxide dielectric thin films

AUTHOR(S)
Zhou, H.; Shi, F. G.; Zhao, B.; Yota, J.
PUB. DATE
September 2005
SOURCE
Applied Physics A: Materials Science & Processing;Sep2005, Vol. 81 Issue 4, p767
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dielectric breakdown strength of carbon doped silicon dioxide thin films with thickness d from 32 nm to 153 nm is determined at 25 °C, 50 °C, 100 °C, 150 °C and 200 °C, using I– V measurements with metal-insulator-semiconductor (MIS) structures. It is found that the dielectric breakdown strength, EB, decreases with increasing temperature for a given film thickness. In addition, a film thickness dependence of breakdown is also observed, which is argued to show an inverse relation to thickness d in the form of EB∝(d-dc)-n. The exponential parameter n and critical thickness limit dc also exhibit temperature dependent behavior, suggesting a temperature accelerated electron trapping process. The activation energy for the temperature acceleration was shown to be thickness dependent, indicating a thickness dependent conduction mechanism. It is thereafter demonstrated that for relatively thick films (thickness >50 nm), the conduction mechanism is Schottky emission. For relatively thin films (thickness <50 nm), the Schottky conduction mechanism was obeyed at low field region while FN tunnelling was observed as a prevail one in the high field region.
ACCESSION #
17551752

 

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