TITLE

Unintentionally doped n-type Al0.67Ga0.33N epilayers

AUTHOR(S)
Nakarmi, M. L.; Nepal, N.; Lin, J. Y.; Jiang, H. X.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p261902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Unintentionally doped Al0.67Ga0.33N epilayers were grown on AlN/sapphire templates by metalorganic chemical vapor deposition. Optimized undoped Al0.67Ga0.33N epilayers exhibited an n-type conductivity as confirmed by Hall-effect measurement with a room-temperature resistivity of about 85 Ω cm. Variable temperature Hall-effect measurement revealed the existence of a shallow donor level with activation energy of about 90 meV. The photoluminescence (PL) spectra exhibited an emission peak at 4.13 eV (4.06 eV) related to an impurity transition at 10 K (300 K). Temperature dependent PL measurement also confirmed the existence of a shallow donor with comparable activation energy as that obtained by Hall-effect measurement. Isolated oxygen impurities are believed to be a strong candidate of the donor that remains as a shallow state in AlxGa1-xN up to x∼0.7. Compensating defects and the nature of the O donor in Al0.67Ga0.33N epilayers are also discussed.
ACCESSION #
17545100

 

Related Articles

  • N-type zinc phosphide grown by molecular beam epitaxy. Suda, Toshikazu; Kakishita, Kazuhiko; Sato, Hiroyuki; Sasaki, Keisuke // Applied Physics Letters;10/14/1996, Vol. 69 Issue 16, p2426 

    We report on the results of Hall effect and photoluminescence (PL) in n-type Zn3P2 grown by molecular beam epitaxy. The Zn3P2 thin films indicated n-type conductivity instead of the usual p-type conductivity due to a strong self-compensation effect with Hall mobility and carrier concentration of...

  • Photoluminescence spectra of highly doped AlxGa1-xAs grown by molecular-beam epitaxy. Ogawa, Junko; Tamamura, Kohshi; Akimoto, Katsuhiro; Mori, Yoshifumi // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p2765 

    Examines the photoluminescence spectra of doped Al[sub0.3] Ga[sub0.7] As epitaxial films grown by molecular-beam epitaxy. Optical properties of the epitaxial films; Results and discussion; Conclusions.

  • Spectroscopic evidence of extended states in the quantized Hall phase of weakly coupled GaAs/AlGaAs multilayers. Pusep, Yu. A.; Guimarães, F. E. G.; Arakaki, A. H.; de Souza, C. A. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 6, p063702 

    The influence of interlayer coupling on the formation of the quantized Hall phase at the filling factor ν=2 was studied in multilayer GaAs/AlGaAs heterostructures. The disorder broadened Gaussian photoluminescence line due to localized electrons was found in the quantized Hall phase of the...

  • Laser ablation of AlN films grown on sapphire substrate. Safadi, Mona R.; Thakur, Jagdish S.; Auner, Gregory W. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p084901 

    Ablation threshold for single-crystal AlN semiconductor films grown epitaxially on sapphire substrate using indigenously built hollow cathode plasma deposition source molecular-beam epitaxy technique is investigated for a number of pulses by varying the fluence value of each pulse. Using a KrF...

  • Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime. Hsu, H. S.; Lin, C. P.; Chou, H.; Huang, J. C. A. // Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p142507 

    Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration ∼1019 cm-3) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the...

  • Spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films. Kim, T. W.; Lim, S. H.; Gambino, R. J. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7212 

    The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated to seek a possibility of practical applications of these thin films. The resistivity of Tb-Fe thin films ranges from 180 to 250 μΩ cm as the Tb content varies...

  • Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films. Kim, Shinhee; Lee, Hakjoon; Yoo, Taehee; Lee, Sangyeop; Lee, Sanghoon; Liu, X.; Furdyna, J. K. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103911 

    The effect of strain on the magnetic anisotropy of GaMnAs films has been systematically investigated using Hall effect measurements. The magnitude of the strain, which was caused by differences in the lattice constant between the GaMnAs film and buffer layer, was controlled by adjustment of the...

  • Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing. Shin-Wei Feng; Tsung-Yi Tang; Yen-Cheng Lu; Shi-Jiun Liu; En-Chiang Lin; Yang, C.C.; Kung-Jen Ma; Ching-Hsing Shen; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X. // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5388 

    We study thermal annealing effects on the size and composition variations of indium-aggregated clusters in two InGaN thin films with photoluminescence (PL) in the yellow and red ranges. The methods of investigation include optical measurement, nanoscale material analysis, and theoretical...

  • Optical study of thermally induced phase separation in evaporated SiOx films. Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G. Yu.; Dan'ko, V.A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2004, Vol. 7 Issue 2, p161 

    SiOx thin films (x ≈ 1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures — 700 and 1000°C) structural transformation of the Si-O phase in the SiO, layers, which leads to the formation of amorphous and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics