Preparation of tungsten oxide nanowires from sputter-deposited WCx films using an annealing/oxidation process

Shui-Jinn Wang; Chao-Hsuing Chen; Rong-Ming Ko; Yi-Cheng Kuo; Chin-Hong Wong; Chien-Hung Wu; Kai-Ming Uang; Tron-Min Chen; Bor-Wen Liou
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263103
Academic Journal
The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited WCx films using a simple annealing/oxidization process was reported. It was found that thermal annealing of WCx films at 680 °C for 30 min in nitrogen followed by oxidation at 450 °C for 30 min in pure oxygen would yield dense and well-crystallized monoclinic W18O49 (010) nanowires with a typical length/diameter of about 0.15–0.2 μm/10–20 nm. The formation of W18O49 nanowires is attributed to the nuclei of immature W2C nanowires experiencing a regrowth process, accompanied by carbon depletion and the oxidization of tungsten during the subsequent oxidization process.


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