TITLE

Spectrally enhanced light emission from aperiodic photonic structures

AUTHOR(S)
Dal Negro, L.; Yi, J. H.; Nguyen, V.; Yi, Y.; Michel, J.; Kimerling, L. C.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p261905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Light-emitting silicon-rich, SiNx/SiO2 Thue-Morse (T-M) multilayer structures have been fabricated in order to investigate the generation and transmission of light in strongly aperiodic deterministic dielectrics. Photoluminescence and optical transmission data experimentally demonstrate the presence of emission enhancement effects occurring at wavelengths corresponding to multiple T-M resonance states. Emission enhancement effects by a factor of almost 6 with respect to homogeneous SiNx dielectrics have been experimentally measured, in good agreement with transfer matrix simulations. The unprecedented degree of structural flexibility of T-M systems can provide alternative routes towards the fabrication of optically active multiwavelength photonic devices.
ACCESSION #
17545085

 

Related Articles

  • Resonance transmission modes in dual-periodical dielectric multilayer films. Qin, Q.; Lu, H.; Zhu, S. N.; Yuan, C. S.; Zhu, Y. Y.; Ming, N. B. // Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4654 

    The resonance transmission modes with high-quality factors may generate in a one-dimensional dual-periodic photonic band-gap structure. The frequency, frequency interval, and number of these modes can be tuned as desired by adjusting its structural parameters. In this letter, we report the...

  • Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection. Kamyab, L.; Rusli; Yu, M. B.; Ding, L.; Lo, G.-Q. // Applied Physics Letters;2/7/2011, Vol. 98 Issue 6, p061105 

    We report the observation of photoluminescence and electroluminescence from amorphous-SiNx:H/SiO2 multilayer structures. An effective method of current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the...

  • High-Efficiency Erbium Ion Luminescence in Silicon Nanocrystal Systems. Kashkarov, P.K.; Kamenev, B.V.; Lisachenko, M.G.; Shalygina, O.A.; Timoshenko, V. Yu.; Schmidt, M.; Heitmann, J.; Zacharias, M. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p104 

    The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically...

  • Heat treatment of metal-capped SiO2 films containing Si nanocrystals. Jensen, J. Skov; Buttenschön, D. A.; Pedersen, T. P. Leervad; Chevallier, J.; Nielsen, B. Bech; Larsen, A. Nylandsted // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p056108 

    SiO2 films containing Si nanocrystals and capped with different metal layers (Al, Pd, and Pt) were annealed in a gas containing hydrogen and subsequently studied by photoluminescence (PL). All metal layers were found to greatly increase the photoluminescence from the Si nanocrystals. However,...

  • Oxide damage by ion implantation in silicon. Losavio, A.; Crivelli, B.; Cazzaniga, F.; Martini, M.; Spinolo, G.; Vedda, A. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2453 

    Reports that an increase in the etching rate of thermally grown silicon dioxide layers has been observed following high energy ion implantation. Phosphorus and boron implantations; Investigation of the dependence upon fluence and ion energy; Analysis of the effect of ion implantation.

  • Optical doping of waveguide materials by MeV Er implantation. Polman, A.; Jacobson, D. C.; Eaglesham, D. J.; Kistler, R. C.; Poate, J. M. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3778 

    Presents a study which examined the implantation of MeV erbium ions into micron-thick silica and phosphosilicate glass films and silicon nitride films with the aim of incorporating the rare-earth dopant on an optically active site in the network. Photoluminescence spectrum showed in implanted...

  • Electrical isolation of GaN by ion implantation damage: Experiment and model. Uzan-Saguy, C.; Salzman, J.; Kalish, R.; Richter, V.; Tish, U.; Zamir, S.; Prawer, S. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2441 

    Demonstrates the electrical and optical isolation of unintentionally doped GaN layers due to the damage created by H[sup +] and He[sup +] ions passing through the layer. Increase in sample resistance caused by the irradiation; Quenching of the band-to-band photoluminescence emission.

  • Dielectric anisotropy and photoinduced voltage in Langmuir–Blodgett films of retinal derivatives. de Oliveira, Helinando P.; Tenorio, Alexandro C.; de Melo, Celso P. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2198 

    We have investigated the photovoltaic response and measured the impedance of mixed LangmuirBlodgett films of retinal derivatives and behenic acid along three perpendicular directions. The results indicate that the molecular dipoles in these samples are preferentially oriented in the direction...

  • Dielectric tensor characterization and evaluation of several magneto-optical recording media. Fu, Hong; Yan, Zheng; Lee, Seh Kwang; Mansuripur, M. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p4076 

    Presents a method for measuring the dielectric tensor of the magneto-optical (MO) layer within a multilayered stack. Formula for the perpendicularly magnetized MO thin film; Measurement procedures and data analysis; Measurement results.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics