Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch

Zhu, K.; Doğan, S.; Moon, Y. T.; Leach, J.; Yun, F.; Johnstone, D.; Morkoç, H.; Li, G.; Ganguly, B.
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p261108
Academic Journal
High-power photoconductive semiconductor switching devices were fabricated on 4H–SiC. In order to prevent current crowding, reduce the contact resistance, and avoid contact degradation, a highly n-doped GaN subcontact layer was inserted between the contact metal and the high resistivity SiC bulk. This method led to a two orders of magnitude reduction in the on-state resistance and, similarly, the photocurrent efficiency was increased by two orders of magnitude with the GaN subcontact layer following the initial high current operation. Both dry etching and wet etching were used to remove the GaN subcontact layer in the channel area. Wet etching was found to be more suitable than dry etching.


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