Device modeling of long-channel nanotube electro-optical emitter

Tersoff, J.; Freitag, Marcus; Tsang, James C.; Avouris, Phaedon
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263108
Academic Journal
We present a simple analytic model of long single-wall nanotube electro-optical emitters, along with experimental measurements using improved devices with reduced hysteresis. The model describes well the voltage-controlled motion of the emission spot, and provides a clear picture of the physical mechanism of device operation. It also indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides.


Related Articles

  • Photo detector IC for Blu-ray-Disc applications: a realization applying efficient design methodologies. Lange, S.; Reich, T.; Nowak, J.; Dimov, B.; Meister, M.; Hennig, E. // Advances in Radio Science;2011, Vol. 9, p219 

    A high-speed photo detector IC for application in Blu-ray/DVD/CD drives is presented. Bandwidths for the highest gain of 254MHz and 221MHz for 405 nm (Blu-ray) and 635 nm (DVD) wavelengths, respectively, were achieved by applying novel design methodologies. The combination of this outstanding...

  • Flexoelectric switching in a zenithally bistable nematic device. Parry-Jones, L. A.; Elston, S. J. // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p093515 

    A Q-tensor method is used to model a grating-aligned zenithally bistable nematic device in two dimensions. The flexoelectrically driven switching between the two ground states is shown to occur through the creation and annihilation of pairs of defects, and the sign and magnitude of the voltage...

  • Piezo-induced sensitivity enhancements in electro-optic field sensors. Garzarella, A.; Qadri, S. B.; Wieting, Terence J.; Dong Ho Wu // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p043113 

    Responsivity measurements are reported for LiNbO3 electro-optic field sensors operated under applied electric fields at ac frequencies in the vicinity of the acoustic resonance values of the crystals. At these frequencies, piezoelectric effects dominate the sensor output. These resonance effects...

  • Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties. Pan, Ko-Ying; Lin, Yu-Hung; Lee, Po-Sheng; Wu, Jyh-Ming; Shih, Han C. // Journal of Nanomaterials;2012, p1 

    Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO2-ZnO core-shell nanowires is 100nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO2-ZnO core-shell nanowires (ALD:...

  • Analysis of critical doping level of sprayed antimony doped tin oxide films. Ravichandran, K.; Philominathan, P. // Journal of Materials Science: Materials in Electronics;Feb2011, Vol. 22 Issue 2, p158 

    ntimony doped tin oxide films are fabricated using a simplified and inexpensive spray pyrolysis technique. The variation in the sheet resistance, as a function of Sb/Sn ratio in the spraying solution, is studied. The sheet resistance decreases with the increase in doping level, attains a minimum...

  • Characteristic features of wideband anisotropic light diffraction in lithium-niobate crystal by a longitudinal acoustic wave. Zyuryukin, Yu. A.; Zavarin, S. V.; Yulaev, A. N. // Optics & Spectroscopy;Jul2009, Vol. 107 Issue 1, p152 

    Two modes corresponding to wideband acousto-optic interaction have been revealed based on the analysis of Bragg conditions. The moduli of the electric fields of the incident and diffracted light beams are calculated for one of these modes. The half-power frequency bandwidth of the control signal...

  • Asymmetric heterostructure for photovoltaic InAs quantum dot infrared photodetector. Nevou, L.; Liverini, V.; Castellano, F.; Bismuto, A.; Faist, J. // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023505 

    A photovoltaic InAs quantum dot-under-a-well photodetector is reported with a peak responsivity at 7 μm wavelength. In this structure, we implement an improved injection scheme, which allows a controlled feeding of the quantum dots through a modulation-doped InGaAs quantum well injector. A...

  • Defence Lasers and Optronic Systems: Solid-State Laser Electronics. MAINI, ANIL K.; MAINI, NAKUL // Electronics For You;May2014, Vol. 3 Issue 1, p78 

    The article focuses on the important uses of solid-state laser electronics in defense lasers and optronic systems. A discussion of the components of the solid-state laser electronics and their function of determining the range of adversary's positions by troops is given. An explanation of how...

  • Ultra High Voltage Surge Waveforms Measurement Using an Optical Transducer. Pe�a-Lecona, Francisco G.; Mu�oz-Maciel, J.; G�mez-Rosas,, G.; Casillas-Rodr�guez, Francisco J.; Mora-Gonz�lez,, M.; Dur�n-Ram�rez, V�ctor M.; Castillo-Quevedo, C. // Sensors & Transducers (1726-5479);May2010, Vol. 116 Issue 5, p104 

    Ultra high voltage surge waveforms measurement by means of a portable optical transducer is presented. The sensor system uses a transducer element based on the longitudinal electro-optic effect with a double pass configuration to obtain a better sensitivity. The transducer head is allocated to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics