Pseudo-metal-base transistor with high gain

Meruvia, Michelle S.; Benvenho, Adriano R. V.; Hümmelgen, Ivo A.; Pasa, André A.; Schwarzacher, Walther
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263504
Academic Journal
We use evaporated C60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.


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