Strain dependence of lasing mechanisms in ZnO epilayers

Li, H. D.; Yu, S. F.; Abiyasa, A. P.; Yuen, Clement; Lau, S. P.; Yang, H. Y.; Leong, Eunice S. P.
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p261111
Academic Journal
The lasing characteristics of highly disordered ZnO thin films deposited on SiO2/Si substrates with and without a MgO buffer layer have been investigated. We observed that the emission spectra of the ZnO epilayers with and without a MgO buffer are associated with the radiative recombination of free-exciton (∼380 nm) and electron-hole plasma (∼395 nm), respectively. The difference in the lasing wavelength is due to the induced compressive (tensile) strain along the c axis of the ZnO epilayers as a result of the presence (absence) of the MgO buffer layer. It is demonstrated that the strain-induced variation of Mott density inside the ZnO epilayers is responsible for the observed lasing characteristics.


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