Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

Salleo, A.; Endicott, F.; Street, R. A.
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263505
Academic Journal
We measured the bias stress characteristics of poly(thiophene) semicrystalline thin-film transistors (TFTs) as a function stress times, gate voltages, and duty cycles. At room temperature, the bias stress has two components: a fast reversible component and a slow long-lived component. We hypothesize that the irreversible component is due to charge trapping in the disordered areas of the semiconductor film. At low duty cycle (<2%), the fast bias stress component is reversed during the off-part of the cycle therefore the observed threshold voltage (VT) shift is only caused by long-lived trapping. Long-lived trapping follows power-law kinetics with a time exponent approximately equal to 0.37. We use these findings to estimate the lifetime of TFTs used as switches in display backplanes.


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