Efficiency of multiple atom doping in wide band gap semiconductors

Miyazaki, Takehide; Yamasaki, Satoshi
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p261910
Academic Journal
We present a thermodynamic model calculation for the efficiency of an impurity-atom-complex formation suggested for doping of wide band gap semiconductors, where the complexes with various sizes coexist at local equilibrium as suggested by Van de Walle and Neugebauer [J. Appl. Phys. 95, 3851 (2004)]. When the size of a target complex becomes large, the effect of configurational entropy of smaller complexes shows up in the energetics and may even hamper stabilization of the target. Thus one should design a target complex with the size being as small as possible and the binding energy as large as possible, in order to make the concept of multiple atom doping a real technology.


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