TITLE

Strongly temperature-dependent free-energy barriers measured in a polycrystalline semiconductor

AUTHOR(S)
Young, David L.; Crandall, Richard S.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p262107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We measured temperature-dependent changes in free-energy barriers for emission of holes and electrons from metastable defects in polycrystalline CuIn1-xGaxSe2 using transient capacitance techniques. The free-energy barrier for holes increases by 17 meV, while the barrier for electrons decreases by 30 meV as the temperature increases from 380 to 400 K. The usual relation between thermal emission time and activation energy is reversed in this temperature range (we find a shorter emission time for the larger activation energy). Large entropy changes of +15 kB and -21 kB for the electron and hole emission, respectively, are calculated using transition-rate theory. These entropy terms in the free energy barrier account for the temperature dependences and the emission time inversion.
ACCESSION #
17545044

 

Related Articles

  • Demonstration of ultra-high-Q small mode volume toroid microcavities on a chip. Kippenberg, T. J.; Spillane, S. M.; Vahala, K. J. // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6113 

    Optical microcavities confine light spatially and temporally and find application in a wide range of fundamental and applied studies. In many areas, the microcavity figure of merit is not only determined by photon lifetime (or the equivalent quality-factor, Q), but also by simultaneous...

  • Simple orifices have an edge. Baillio, Paul A.; Kren, Lawrence // Machine Design;3/18/2004, Vol. 76 Issue 6, p66 

    Focuses on the significance of orifice-flow repeatability to orifice-flow efficiency. Metric in orifice design; Method used to drill ruby and sapphire with a nine on the Mohs hardness scale; Processes used for ruby orifices with larger diameters. INSET: MEASURING ORIFICE FLOW.

  • Enhanced magneto-optical oscillations from two-dimensional hole-gases in the presence of Mn ions. Gazoto, A. L.; Brasil, M. J. S. P.; Iikawa, F.; Brum, J. A.; Ribeiro, E.; Danilov, Yu. A.; Vikhrova, O. V.; Zvonkov, B. N. // Applied Physics Letters;6/20/2011, Vol. 98 Issue 25, p251901 

    We investigated the effects of nearby Mn ions on the optical properties of two-dimensional hole-gases confined in InGaAs/GaAs quantum wells. We observed energy oscillations on both the averaged emission and the spin-splitting energies, whereas the first one presents maxima at all integer filling...

  • Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors. de Boer, R. W. I.; Stassen, A. F.; Craciun, M. F.; Mulder, C. L.; Molinari, A.; Rogge, S.; Morpurgo, A. F. // Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p262109 

    We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes...

  • Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO2 glasses. Wang, R. P.; Tai, N.; Saito, K.; Ikushima, A. J. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023701 

    Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf...

  • Evidence for capture of holes into resonant states in boron-doped silicon. Yen, S. T.; Tulupenko, V. N.; Cheng, E. S.; Chung, P. K.; Lee, C. P.; Dalakyan, A. T.; Chao, K. A. // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p4970 

    The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p3/2 absorptions, we find that the hole population in...

  • Distributions of self-trapped hole continuums in silica glass. Wang, R. P.; Saito, K.; Ikushima, A. J. // Journal of Applied Physics;7/1/2006, Vol. 100 Issue 1, p013706 

    Photobleaching of self-trapped holes (STH) in low temperature UV-irradiated silica glass has been investigated by the electron spin resonance method. The bleaching time dependence of the decay of two kinds of STH, STH1, and STH2, could be well fitted by the stretched exponential function, and...

  • Computer simulations of pore growth in silicon. Erlebacher, J.; Sieradzki, K.; Searson, P. C. // Journal of Applied Physics;7/1/1994, Vol. 76 Issue 1, p182 

    Presents a study which examined the dynamics of pore formation in silicon by computer simulation. Model for hole transport during pore growth; Simulation results; Effect of the migrational region on the resultant morphologies.

  • The influence of magnetic ordering on the electronic energy structure of CuFeS. Lavrentyev, A.; Gabrelian, B.; Shkumat, P.; Kulagin, B.; Nikiforov, I. // Journal of Structural Chemistry;Dec2011, Vol. 52, p61 

    The modified LAPW+lo method with Wien2k software package was used to calculate the electronic energy structure of CuFeS as a component of chalcopyrite. CuFeS was found to be a conductor in the absence of antiferromagnetic ordering. Antiferromagnetic ordering in (001) layers leads to appearance...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics