Monte Carlo study of vertical electron transport in GaN/AlGaN heterostructures

Reklaitis, A.
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p262110
Academic Journal
The dc and large-signal ac vertical electron transport in the double-barrier GaN/AlGaN heterostructures are studied by Monte Carlo simulations. It is found that the current-voltage characteristic of the GaN/AlGaN diode is asymmetric due to polarization charges at GaN/AlGaN interfaces. On the contrary, the calculated capacitance-voltage characteristic is nearly symmetric in respect to the shifted bias voltage. The capacitance-voltage characteristic shows that GaN/AlGaN heterostructures are promising candidates for the design of efficient varactor diodes. Study of the large-signal ac electron transport predicts that GaN/AlGaN varactors are capable to operate as frequency triplers in the near-terahertz frequency range.


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