Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Yoshitake, T.; Nakagauchi, D.; Ogawa, T.; Itakura, M.; Kuwano, N.; Tomokiyo, Y.; Kajiwara, T.; Nagayama, K.
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p262505
Academic Journal
Ferromagnetic Fe3Si thin films with an extremely smoothsurface morphology can be epitaxially grown on Si(111) at roomtemperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[110]‖Si[110]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960 emu/cm³, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [110] direction in the film plane


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