TITLE

Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

AUTHOR(S)
Yoshitake, T.; Nakagauchi, D.; Ogawa, T.; Itakura, M.; Kuwano, N.; Tomokiyo, Y.; Kajiwara, T.; Nagayama, K.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p262505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ferromagnetic Fe3Si thin films with an extremely smoothsurface morphology can be epitaxially grown on Si(111) at roomtemperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[110]‖Si[110]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960 emu/cm³, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [110] direction in the film plane
ACCESSION #
17545040

 

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