In-plane strain distribution in the surface region of thin silicon overlayers on insulator

Omi, Hiroo; Kawamura, Tomoaki; Fujikawa, Seiji; Tsusaka, Yoshiyuki; Kagoshima, Yasushi; Matsui, Junji
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263112
Academic Journal
A thin silicon nano-overlayer (SNOL) fabricated by oxidation and etchback in a separation by implantation of oxygen wafer was investigated by grazing incident x-ray diffraction at incident angles between 0.01° and 0.1° below the critical angle of total reflection (0.18° ). We measured {220} reflections by probing the sample in depth and found that the SNOL has finite domains under strain close to the surface. We also found that annealing the sample up to 1000 °C significantly reduced inhomogeneous in depth strain and increased the size of the domains in the surface region of the SNOL.


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