Highly sensitive strain detection in strained silicon by surface-enhanced Raman spectroscopy

Hayazawa, Norihiko; Motohashi, Masashi; Saito, Yuika; Kawata, Satoshi
June 2005
Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p263114
Academic Journal
We used surface-enhanced Raman spectroscopy to observe selective amplification of the vibration mode of Si–Si in strained silicon. By covering the silver island film on a strained silicon layer, the Raman signal from the strained silicon can be detected with a high sensitivity compared with the overwhelming background signal from the underlying silicon layer. This technique allowed us to carry out micro-Raman spectroscopy on strained silicon. This technique can be a precursor for nano-Raman spectroscopy using a tip-enhanced Raman microscope with a sharpened metallic probe tip.


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