Pressure Dependence of Intersubband Transitions in HgTe/Hg0.3Cd0.7Te Superlattices

Becker, C. R.; Latussek, V.; Landwehr, G.; Bini, R.; Ulivi, L.
June 2005
Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p811
Academic Journal
The optical absorption coefficient of HgTe/Hg0.3Cd0.7Te superlattices (SLs) and its pressure dependence has been investigated at hydrostatic pressures up to 30 kbar at room temperature. The corresponding intersubband transition energies result from a comparison of experimental and theoretical absorption coefficients. The latter is based on the band structure, which is calculated using Kane's four-band (8 x 8 k · p) model together with the envelope function approximation. The experimental linear pressure coefficients of the H1 - E1 and H1 - L1 intersubband transitions are in good agreement with the theoretical values, e.g., 7.15 ± 0.3 meV/kbar and 6.2 ± 0.3 meV/kbar compared to 7.4 and 6.4 meV/kbar, respectively. This is in stark contrast to the pressure dependence of ≤1 meV/kbar of the photoluminescence (PL) peaks of a similar SL reported in the literature. Consequently, we conclude that the reported PL peaks are not due to intersubband transitions and that the k · p model correctly reproduces the electronic band structure and its pressure dependence of HgTe/Hg1-xCdxTe SLs.


Related Articles

  • Comparison of Normal and Inverted Band Structure HgTe/CdTe Superlattices for Very Long Wavelength Infrared Detectors. Grein, C. H.; Jung, H.; Singh, R.; Flatté, M. E. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p905 

    The type III band alignment of HgTe/CdTe superlattices leads to the interesting possibility of achieving very long wavelength infrared (VLWIR) (15 µm and longer) cutoff wavelengths with either normal (HgTe layer thickness less than about 70 Å for CdTe layer thickness of 50 Å) or...

  • Spatially Resolved Photoluminescence and Transmission Spectra of HgCdTe. Furstenberg, Robert; White, Jeffrey O.; Olson, Gregory L. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p791 

    We report new high-resolution scanning photoluminescence (PL) experiments in the mid-infrared (IR) portion of the spectrum. The samples investigated were Hg0.7Cd0.3Te epilayers grown on Cd0.96Zn0.04Te substrates. The influence of macrodefects and the annealing of samples on the PL signal were...

  • Temperature, Thickness, and Interfacial Composition Effects on the Absorption Properties of (Hg,Cd)Te Epilayers Grown by Liquid-Phase Epitaxy on CdZnTe. Littler, C. L.; Gorman, B. P.; Weirauch, D. F.; Liao, P. K.; Schaake, H. F. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p768 

    Transmission spectra of liquid-phase epitaxy (LPE) Hg1-xCdxTe with Cd mole fractions in the range of 0.23 < x < 0.30 have been obtained as a function of temperature and thickness. The results are described using a model consisting of exponential (Urbach) absorption in the band tail region and...

  • Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces. Sobiesierski, Z.; Dharmadasa, I. M.; Williams, R. H. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2623 

    We have performed photoluminescence (PL) measurements on chemically etched single-crystal p-CdTe. In addition, x-ray photoemission measurements have been used as a guide to surface stoichiometry for each chemical treatment. The relative intensities of the 0.875±0.005 eV and 1.125±0.005 eV...

  • Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy. Leopold, D. J.; Ballingall, J. M.; Wroge, M. L. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1473 

    Single-crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low-temperature (4.2 K) photoluminescence spectra exhibit free-exciton and bound-exciton peaks having linewidths on the order of 2 meV for both CdTe...

  • Influence of Cd vacancies on the photoluminescence of CdTe. Figueroa, Juan M.; Sánchez-Sinencio, F.; Mendoza-Alvarez, J. G.; Zelaya, O.; Vázquez-López, C.; Helman, J. S. // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p452 

    Focuses on the influence of cadmium on the narrow band and bound excitation peak of the cadmium-tellurium (CdTe) photoluminescence spectrum. Use of an Air Products Displex helium cryogenic system; Cause of the decrease of both the photocurrent and the photoluminescence; Industrial uses of...

  • Intrinsic carrier concentrations in Hg1-xCdxTe with the use of Fermi–Dirac statistics. Madarasz, Frank L.; Szmulowicz, Frank // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2770 

    Presents a study which calculated the intrinsic carrier concentrations in mercury[1-x]cadmium[[x]tellurium with the use of Fermi-Dirac statistics. Method of the study; Results and discussion; Conclusion.

  • Preparation of Hg1-xCdxTe with a semiclosed rotational liquid-phase-epitaxy system. Lan, H.; Cheng, K. Y.; Shiue, C. C.; Pang, Y. M.; Yang, S. J. // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p1895 

    Presents information on a study which analyzed the growth of mercury[sub1-x] cadmium (Cd)[subx] tellurium (Te) epitaxial layers on CdTe substrates by the liquid-phase-epitaxy (LPE) method in a horizontal open system. Elements of the semiclosed rotational boat; Measurement of electrical...

  • The temperature dependence of the optical dispersion parameters in Hg0.795Cd0.205Te. Toyoda, T.; Hanba, S. // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5196 

    Analyzes the optical dispersion parameters in mercury[sub 0.795] cadmium[sub 0.205] tellurium in the temperature range from 100 to 300 Kelvin. Physical properties of mercury[sub 1--x] cadmium[sub x]; Assessment of methods for obtaining the dispersion and oscillating energies; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics