Band engineering of carbon nanotube field-effect transistors via selected area chemical gating

Xiaolei Liu; Zhicheng Luo; Song Han; Tao Tang; Daihua Zhang; Chongwu Zhou
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p243501
Academic Journal
This letter presents an approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part, or the contacts, of nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage positively, while NH3 shifts it negatively for both center-exposed and contact-exposed devices. However, modulations to the subthreshold swing are in opposite directions for center-exposed and contact-exposed devices: NO2 lowers the subthreshold swing of the contact-exposed devices, but increases that of the center-exposed devices. In contrast, NH3 reduces the subthreshold swing of the center-exposed devices, but increases that of the contact-exposed devices.


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