TITLE

Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm

AUTHOR(S)
Bradley, J. D. B.; Jessop, P. E.; Knights, A. P.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe the fabrication and operation of an optical power monitor, monolithically integrated with a silicon-on-insulator rib waveguide. The device consists of a p+-v-n+ structure with a detection volume coincident with the single-mode supporting waveguide. Detection of optical signals at wavelengths around 1550 nm is significantly enhanced by the introduction of midband-gap generation centers, which provide partial absorption of the infrared light. The most efficient device extracted 19% of optical power from the waveguide and showed a responsivity of 3 mA/W. These devices are fabricated using current standard processing technology and are fully compatible with silicon waveguide technology and integrated operational amplifier circuits.
ACCESSION #
17452712

 

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