Measure of disorder in tetrahedrally bonded semiconductors

Sundari, S. Tripura; Raghavan, G.
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241906
Academic Journal
A measure of crystalline order in tetrahedrally bonded semiconductors is proposed based on optical response. This measure is obtained from the <111> critical point structure in the dielectric spectra. This descriptor is sensitive to the nature and extent of disorder in specimens and distinguishes differences in medium and short-order present in amorphous materials. Application to Ar+-irradiated Si specimens yields the threshold amorphization dose and this technique is sensitive to structural changes which occur as a function of irradiation fluence both above and beyond the amorphization threshhold. Systematic variations are also obtained in hydrogenated amorphous-Si. The general validity of the method is indicated.


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