TITLE

Measure of disorder in tetrahedrally bonded semiconductors

AUTHOR(S)
Sundari, S. Tripura; Raghavan, G.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A measure of crystalline order in tetrahedrally bonded semiconductors is proposed based on optical response. This measure is obtained from the <111> critical point structure in the dielectric spectra. This descriptor is sensitive to the nature and extent of disorder in specimens and distinguishes differences in medium and short-order present in amorphous materials. Application to Ar+-irradiated Si specimens yields the threshold amorphization dose and this technique is sensitive to structural changes which occur as a function of irradiation fluence both above and beyond the amorphization threshhold. Systematic variations are also obtained in hydrogenated amorphous-Si. The general validity of the method is indicated.
ACCESSION #
17452710

 

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