Synthesis and field emission properties of TiSi2 nanowires

Xiang, B.; Wang, Q. X.; Wang, Z.; Zhang, X. Z.; Liu, L. Q.; Xu, J.; Yu, D. P.
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p243103
Academic Journal
TiSi2 is a high-melting compound with excellent conductivity ∼several μΩ cm. TiSi2 nanowires were fabricated in large scale by a simple vapor phase deposition method. The as-synthesized TiSi2 nanowires were investigated using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman scattering. Field emission property of TiSi2 nanowires was studied and an emission current density of 5 mA/cm2 was obtained and no obvious degradation was observed in a life stability experiment period for over ∼40 h. The cathodoluminescence images were very bright and homogenous. The remarkable performance reveals that the TiSi2 nanowires can serve as a good candidate for commercial application in vacuum microelectronic devices, particularly flat panel displays.


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