Absence of the enhanced intra-4f transition cross section at 1.5 μm of Er3+ in Si-rich SiO2

Mertens, H.; Polman, A.; Aarts, I. M. P.; Kessels, W. M. M.; van de Sanden, M. C. M.
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241109
Academic Journal
We present measurements of the optical absorption cross section of the 4I15/2→4I13/2 transition at 1.5 μm of Er3+ ions embedded in SiO2 and Si-rich oxide, using cavity ringdown spectroscopy on thin films. The peak absorption cross section for Er3+ embedded in Si-rich oxide (10 at. % excess Si) was found to be (8±2)×10-21 cm2 at 1536 nm, similar to typical values for Er embedded in SiO2. The data imply that the silicon nanoclusters incorporated in Si-rich oxide do not enhance the peak cross section of the Er3+4I15/2-4I13/2 transition by 1-2 orders of magnitude, contrary to what has been reported in earlier work.


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