TITLE

Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature

AUTHOR(S)
Bao, Mingqiang; Liu, Fei; Baron, Filipp; Wang, Kang L.; Li, Ruigang
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p242104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron tunneling spectroscopy is used to study drain-source current spectra of metal-oxide-semiconductor field-effect transistors (MOSFETs). Measured at liquid helium temperature (4.2 K), experimental results reveal that as drain-source voltage (Vds) increases, the first derivative of drain-source current (or conductance) first decreases, then increases to a maximum and finally decreases again at higher Vds, which is different from the monotonous decreasing feature described by the conventional MOSFET theory. In addition, the measured MOSFET spectra show that there are fine features on the second derivative spectra, and these features may be used to extract trap information.
ACCESSION #
17452688

 

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