Dynamic avalanche breakdown of a p-n junction: Deterministic triggering of a plane streamer front

Rodin, Pavel; Grekhov, Igor
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p243504
Academic Journal
We discuss the dynamic impact ionization breakdown of a high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization on a time scale smaller than the inverse thermogeneration rate. The avalanche-to-streamer transition characterized by generation of dense electron-hole plasma capable of screening the applied external electric field occurs in such regimes. We argue that the experimentally observed deterministic triggering of the plane streamer front at the electric-field strength above the threshold of avalanche impact ionization, yet below the threshold of band-to-band tunneling, is generally caused by field-enhanced ionization of deep-level centers. We suggest that the process-induced sulfur centers and native defects such as EL2, HB2, and HB5 centers initiate the front in Si and GaAs structures, respectively. In deep-level-free structures the plane streamer front is triggered by Zener band-to-band tunneling.


Related Articles

  • Giant burst of impact ionization in a p-n junction of the 6 H-SiC polytype. Sankin, V. I.; Shkrebiy, P. P. // Semiconductors;Dec2008, Vol. 42 Issue 12, p1408 

    A study of the electron component of impact ionization in the p +- n −- n + junction in the 6 HSiC polytype made it possible to detect a giant burst of impact ionization and origination of an extra early avalanche breakdown. The electric field of this breakdown is lower by ∼20% than...

  • Positive and negative temperature dependences of electron-impact ionization in In0.53Ga0.47As. Choo, K. Y.; Ong, D. S. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023714 

    The electron-impact ionization coefficient (α) in In0.53Ga0.47As increases with temperature at electric fields below 200 kV/cm, in contrast to most crystalline semiconductors. It exhibits conventional negative temperature dependence at higher fields. A four-valley analytical band Monte Carlo...

  • S(1S) production following electron impact on thiophosgene (Cl2CS). Kedzierski, W.; Borbely, J.; Mutus, J.; Amlin, S.; McConkey, J. W. // Journal of Chemical Physics;5/15/2004, Vol. 120 Issue 19, p9087 

    A special xenon matrix detector has been used to study the production of S(¹S) following controlled electron impact on thiophosgene (Cl2CS) targets over an electron energy range from threshold to 400 eV. Time-of-flight spectroscopy has been used to measure S(¹S) fragment kinetic energies....

  • Generalized Kolbenstvedt model for electron impact ionization of K-, L- and M-shell atoms. Haque, A. K. F.; Uddin, M. A.; Patoary, M. A. R.; Basak, A. K.; Talukder, M. R.; Saha, B. C.; Karim, K. R.; Malik, F. B. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;May2007, Vol. 42 Issue 2, p203 

    The recently modified Kolbenstvedt (MKLV) model [Eur. Phys. J. D 37, 361 (2006)], developed for electron impact ionization (EII) of the K-shell atomic targets, has been extended to generalize its two parameters in terms of the electronic orbitals nl. The generalized MKLV (GKLV) with two sets of...

  • Electron-impact ionization of CCl4 and CCl2F2. Lindsay, B. G.; McDonald, K. F.; Yu, W. S.; Stebbings, R. F.; Yousif, F. B. // Journal of Chemical Physics;7/15/2004, Vol. 121 Issue 3, p1350 

    Absolute partial and total cross sections for electron-impact ionization of CCl4 and CCl2F2 are reported for electron energies from threshold to 1000 eV. The product ions are mass analyzed using a time-of-flight mass spectrometer and detected with a position-sensitive detector whose output...

  • Experiments on Electron-Impact Ionization of Atomic and Molecular Ions. Bannister, M. E. // AIP Conference Proceedings;2005, Vol. 771 Issue 1, p172 

    Recent experimental measurements of cross sections for electron-impact ionization of atomic and molecular ions will be highlighted, with emphasis on results obtained with the crossed-beams method. These accurate absolute cross sections and high-resolution energy scans for atomic ions provide...

  • Measurement of electron impact ionization coefficient in bulk silicon under a low-electric field. Takayanagi, Isao; Matsumoto, Kazuya; Nakamura, Jun-ichi // Journal of Applied Physics;9/1/1992, Vol. 72 Issue 5, p1989 

    Presents information on a study that extracted the electron impact ionization coefficient in bulk silicon using a method that is applicable for the low-electric fields. Determination of the electron ionization coefficient; Reason for the importance of impact ionization in semiconductors;...

  • Tunneling Ionization of Atoms with Excitation of the Core. Zon, B. A. // Journal of Experimental & Theoretical Physics;Nov2000, Vol. 91 Issue 5, p899 

    A general formula is obtained for the probability of tunneling ionization of an atom accompanied by excitation of the core. This formula is a generalization of the Carlson formula for the probability of a single-photon two-electron transition in atoms. The limiting case of this formula, just as...

  • On The Physical Mechanism At The Origin Of Multiple Double Layers Appearance In Plasma. Dimitriu, D. G.; Gurlui, S.; Aflori, M.; Ivan, L. M. // AIP Conference Proceedings;2006, Vol. 812 Issue 1, p149 

    Double layer in plasma are nonlinear potential structures consisting of two adjacent layers of positive and negative space charges, respectively. Between these layers a potential jump exists, creating an electric field. A common way to obtain a double layer structure is to positively bias an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics