Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

Yuen, Clement; Yu, S. F.; Lau, S. P.; Rusli; Chen, T. P.
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241111
Academic Journal
We report the low-temperature (∼150 °C) fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of <10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.


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