TITLE

Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope

AUTHOR(S)
Li, T.; Hahn, E.; Gerthsen, D.; Rosenauer, A.; Strittmatter, A.; Reißmann, L.; Bimberg, D.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241911
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The change of the morphology and indium distribution in an In0.12Ga0.88N quantum well embedded in GaN was investigated depending on the duration of electron-beam irradiation in a transmission electron microscope. Strain-state analysis based on high-resolution lattice-fringe images was used to determine quantitatively the local and average indium concentration of the InGaN quantum well. In-rich clusters were found already in the first image taken after 20 s of irradiation. The indium concentration in the clusters tends to increase with prolonged irradiation time. In contrast, the locally averaged indium concentration and the quantum-well width do not change within the first minute.
ACCESSION #
17452682

 

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