TITLE

Self-assembly of Ge quantum dots on Si(100)-2×1 by pulsed laser deposition

AUTHOR(S)
Hegazy, M. S.; Elsayed-Ali, H. E.
PUB. DATE
June 2005
SOURCE
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p243104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Self-assembled Ge quantum dots are grown on Si(100)-2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids.
ACCESSION #
17452679

 

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