Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions

Hui-Bin Lu; Kui-Juan Jin; Yan-Hong Huang; Meng He; Kun Zhao; Bo-Lin Cheng; Zheng-Hao Chen; Yue-Liang Zhou; Sou-Yu Dai; Guo-Zhen Yang
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241915
Academic Journal
Ultrafast photoelectric effects have been observed in La0.7Sr0.3MnO3/Si p-n junctions fabricated by laser molecular-beam epitaxy. The rise time was ∼210 ps and the full width at half-maximum was ∼650 ps for the photovoltaic pulse when the junction was irradiated by a 1064 nm laser pulse of 25 ps duration. The photovoltaic sensitivity was as large as 435 mV/mJ for a 1064 nm laser pulse. No such photovoltaic signal was observed with irradiation from a 10.6 μm CO2 laser pulse. The results reveal that this phenomenon is an ultrafast photoelectric effect.


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