Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

Skogen, Erik J.; Coldren, Larry A.; Raring, James W.; DenBaars, Steven P.
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p241117
Academic Journal
The development of photonic integrated circuits lattice matched to GaAs are desirable for the manufacture of high-power, high-efficiency optical components. In this letter we investigate and describe a process technique based on quantum-well intermixing to achieve multiple band edges in the Al-free 980 nm InGaAs/InGaAsP/InGaP material system.


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