Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices

Costa e Silva, J.; de Oliveira, E. L.; de Sousa, J. S.; Freire, J. A. K.; Freire, V. N.; Farias, G. A.
June 2005
Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p243507
Academic Journal
The electrical properties of polycrystalline Si1-xGex/HfO2/Si metal-oxide-semiconductor (MOS) devices are investigated theoretically by solving self-consistently the Poisson and Schrödinger equations. Our calculations demonstrate that the combination of HfO2 as dielectric film and polycrystalline gates causes charge inversion in both substrate and gate layer for ultrathin oxide layers. This effect is a consequence of the high dielectric constant of HfO2, and it is expected to occur for all high-κ-based polygated MOS devices. However, the relative doping concentration between polycrystalline gate and substrate can be used to decrease the effect of gate inversion.


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