Experimental imaging of silicon nanotubes

De Crescenzi, M.; Castrucci, P.; Scarselli, M.; Diociaiuti, M.; Chaudhari, Prajakta S.; Balasubramanian, C.; Bhave, Tejashree M.; Bhoraskar, S. V.
June 2005
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p231901
Academic Journal
Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character.


Related Articles

  • Extraction and Local Probing of Individual Carbon Nanotubes. de Knoop, L.; Svensson, K.; Pettersson, H.; Olsson, E. // AIP Conference Proceedings;2005, Vol. 786 Issue 1, p118 

    A method to extract individual carbon nanotubes with a good electrical contact for investigation by transmission electron microscopy (TEM) and scanning tunneling microscopy (STM) has been developed and evaluated. The extraction method includes the use of a combined focused ion beam workstation...

  • Bilayer gate dielectric study by scanning tunneling microscopy. Ong, Y. C.; Ang, D. S.; Pey, K. L.; O’Shea, S. J.; Goh, K. E. J.; Troadec, C.; Tung, C. H.; Kawanago, T.; Kakushima, K.; Iwai, H. // Applied Physics Letters;9/3/2007, Vol. 91 Issue 10, p102905 

    An advanced bilayer gate dielectric stack consisting of Sc2O3/La2O3/SiOx annealed in nitrogen at 300 °C was studied by scanning tunneling microscopy using bias dependent imaging. By changing the sample bias, electrical properties of different layers of the dielectric stack can be studied. At...

  • The precipitation of kinks on stepped Si(111) surfaces. Wei, Jian; Wang, Xue-sen; Bartelt, Norman C.; Williams, Ellen D.; Tung, R. T. // Journal of Chemical Physics;6/15/1991, Vol. 94 Issue 12, p8384 

    High resolution low-energy electron diffraction, scanning tunneling microscopy (STM), and transmission electron microscopy (TEM) have been used to study the temperature dependence of a vicinal (stepped) Si(111) surface with a polar angle of 6° from (111) along an azimuth rotated about 10°...

  • Morphology and electronic properties of carbon nanotubes grown with Fe catalyst. Kowalska, E.; Radomska, J.; Byszewski, P.; Kowalczyk, P.; Antonova, K.; Diduszko, R.; Lange, H.; Dluzewski, P. // Journal of Materials Research;Oct2003, Vol. 18 Issue 10, p2451 

    We describe the synthesis and characterization of aligned carbon nanotubes deposited on quartz substrates by pyrolysis of a xylene-ferrocene mixture at 700�C at atmospheric,pressure. For microscopic characterization of the pyrolyzed products, scanning and transmission electron microscopies...

  • Probing graphene grain boundaries with optical microscopy. Duong, Dinh Loc; Han, Gang Hee; Lee, Seung Mi; Gunes, Fethullah; Kim, Eun Sung; Kim, Sung Tae; Kim, Heetae; Ta, Quang Huy; So, Kang Pyo; Yoon, Seok Jun; Chae, Seung Jin; Jo, Young Woo; Park, Min Ho; Chae, Sang Hoon; Lim, Seong Chu; Choi, Jae Young; Lee, Young Hee // Nature;10/11/2012, Vol. 490 Issue 7419, p235 

    Grain boundaries in graphene are formed by the joining of islands during the initial growth stage, and these boundaries govern transport properties and related device performance. Although information on the atomic rearrangement at graphene grain boundaries can be obtained using transmission...

  • Phase transformation in self-assembled Gd silicide nanostructures on Si(001). Gangfeng Ye; Crimp, Martin A.; Nogami, Jun // Journal of Materials Research;9/14/2011, Vol. 26 Issue 17, p2276 

    Gd silicide nanostructures epitaxially grown on Si(001) are studied by plan-view transmission electron microscopy and associated nanobeam electron diffraction, as well as scanning tunneling microscopy. The nanobeam diffraction measurements show a direct correlation between the nanostructure...

  • Synthesis of single- and multi-wall carbon nanotubes over supported catalysts. Fonseca, A.; Hernadi, K.; Piedigrosso, P.; Colomer, J.-F.; Mukhopadhyay, K.; Doome, R.; Lazarescu, S.; Biro, L.P.; Lambin, P.; Thiry, P.A.; Bernaerts, D.; Nagy, J.B. // Applied Physics A: Materials Science & Processing;1998, Vol. 67 Issue 1, p11 

    Abstract. Catalytic synthesis and some characterization of multi- and single-wall carbon nanotubes are presented. Supported transition-metal catalysts were prepared by different methods and were tested in the production of nanotubes by decomposition of hydrocarbons at 700 Celsius, using a...

  • Surface evolution of strained SrRuO3 films deposited at various temperatures on SrTiO3 (001) substrates. Sang Ho Oh; Chan Gyung Park // Journal of Materials Research;Jun2006, Vol. 21 Issue 6, p27 

    Surface evolution was studied for strained SrRuO3 films with a nominal 75 nm thickness deposited at various substrate temperatures (650-850 °C). Epitaxial growth of the films was achieved on single TiO2-terminated SrTiO3 (001) substrates by using ion-beam sputtering. The surface morphology of...

  • Vacuum breakdown of carbon-nanotube field emitters on a silicon tip. She, J.C.; Xu, N.S.; Deng, S.Z.; Chen, Jun; Bishop, H.; Huq, S.E.; Wang, L.; Zhong, D.Y.; Wang, E.G. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2671 

    Findings are given from the experimental observation of the vacuum breakdown of carbon-nanotube (CNT) field emitters on a Si tip. The CNTs were grown on the apex of a Si microtip by microwave plasma-enhanced chemical vapor deposition. The electrical contact of the CNT-Si junction was shown to be...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics